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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BSN20W N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1997 Jun 20 2000 Mar 10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. APPLICATIONS * Thin and thick film circuits * General purpose fast switching applications. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon Ptot Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation Tamb 25 C; note 1 CONDITIONS 50 1.8 80 15 200 MAX. V V
g 1 Top view 2
MAM356
BSN20W
PINNING - SOT323 PIN 1 2 3 SYMBOL g s d DESCRIPTION gate source drain
handbook, halfpage
3
d
s
Marking code: M8- = made in Hong Kong; M8t = made in Malaysia (or Bangkok).
Fig.1 Simplified outline and symbol.
UNIT
mA mW
2000 Mar 10
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature Tamb 25 C; note 1 open drain CONDITIONS - - - - - -65 -65 MIN.
BSN20W
MAX. 50 20 80 300 200 +150 +150 V V
UNIT
mA mA mW C C
UNIT K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance CONDITIONS VGS = 0; ID = 10 A VGS = VDS ; ID = 1 mA VGS = 0; VDS = 40 V VGS = 20 V; VDS = 0 VGS = 10 V; ID = 80 mA VGS = 5 V; ID = 80 mA VGS = 2.5 V; ID = 10 mA Ciss Coss Crss ton toff input capacitance output capacitance reverse transfer capacitance VGS = 0; VDS = 10 V; f = 1 MHz VGS = 0; VDS = 10 V; f = 1 MHz VGS = 0; VDS = 10 V; f = 1 MHz VGS = 0 to 10 V; VDD = 20 V; ID = 80 mA VGS = 10 to 0 V; VDD = 20 V; ID = 80 mA MIN. 50 0.4 - - - - - - - - - - TYP. - - - - 8 14 18 8 7 2 MAX. - 1.8 1 100 15 20 30 15 15 5 UNIT V V A nA pF pF pF
Switching times turn-on time turn-off time 2 5 5 10 ns ns
2000 Mar 10
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSN20W
handbook, halfpage
300
MDA183
handbook,30 halfpage
MRA781
Ptot (mW) 200
C (pF)
20
100
10
(1) (2)
(3)
0 0 50 100 200 150 Tamb (oC)
0
0
5
10
15
20 25 VDS (V)
VGS = 0; Tj = 25 C; f = 1 MHz. (1) Ciss. (2) Coss. (3) Crss. Device mounted on a printed-circuit board.
Fig.3 Fig.2 Power derating curve.
Capacitance as a function of drain-source voltage; typical values.
handbook, halfpage
MRA782
handbook, halfpage
500 ID (mA) 400
MRA783
500 ID (mA) 400
V = 10 V GS 7V
5V 300 4V 200 3V 100 2.5 V
300
200
100
0
0 0 4 8 VDS (V) 12
0
2
4
6
8
10 VGS (V)
Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig.4 Output characteristics; typical values.
Fig.5 Transfer characteristics; typical values.
2000 Mar 10
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSN20W
handbook, halfpage
24
MDA163
handbook, halfpage
80
MDA162
RDSon () 16
RDSon ()
(1)
60
(2)
40
(3)
8
20
0 1 10
102
ID (mA)
103
0 0 2 4 6 8 10 VGS (V)
Tj = 25 C. (1) VGS = 2.5 V. (2) VGS = 5 V. (3) VGS = 10 V.
VDS = 0.1 V; Tj = 25 C.
Fig.7 Fig.6 Drain-source on-state resistance as a function of drain current; typical values.
Drain-source on-state resistance as a function of gate-source voltage; typical values.
MRA785
MRA784
handbook,1.2 halfpage
2 handbook, halfpage k
(2)
k 1.1
1.6
(1)
1 1.2 0.9 0.8 0.8
0.7 -50
0
50
100
Tj (oC)
150
0.4 -50
0
50
100
Tj (oC)
150
R DSon at T j k = ---------------------------------------R DSon at 25 C V GSth at T j k = ------------------------------------V GSth at 25C Typical VGSth at 1 mA. Typical RDSon at 100 mA / 10 V. (1) ID = 10 mA; VGS = 2.5 V. (2) ID = 100 mA; VGS = 10 V.
Fig.8
Temperature coefficient of gate-source threshold voltage.
Fig.9
Temperature coefficient of drain-source on-state resistance.
2000 Mar 10
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BSN20W
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000 Mar 10
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BSN20W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Mar 10
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603502/02/pp8
Date of release: 2000
Mar 10
Document order number:
9397 750 06692

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